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Nature Materials
Nature Materials is a multidisciplinary journal aimed at bringing together cutting-edge research across the entire spectrum of materials science and technology. Nature Materials covers all applied and fundamental aspects of the synthesis/processing, structure/composition, properties and performance of materials. Nature Materials provides a forum for the development of a common identity among materials scientists while encouraging researchers to cross established subdisciplinary lines. To achieve this, Nature Materials takes an interdisciplinary, integrated and balanced approach to all areas of materials research while fostering the exchange of ideas between scientists involved in different communities.
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Experimental observation of liquid–solid transition of nanoconfined water at ambient temperature
Nature Materials, Published online: 12 January 2026; doi:10.1038/s41563-025-02456-8
A combination of scanning probe microscopy and quantum sensing is used to investigate changes in water structure under confinement. A liquid–solid phase transition is observed in thin films of water below a confinement size of 2 nm at ambient temperature.
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Wafer-scale monolayer dielectric integration on atomically thin semiconductors
Nature Materials, Published online: 12 January 2026; doi:10.1038/s41563-025-02445-x
Wafer-scale monolayer MoO3 enables the integration of dielectrics with ultralow capacitance equivalent thickness on atomically thin semiconductors, achieving high yield and effective operation of n-type and p-type top-gated transistors.
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Flexible two-dimensional neural sensors
Nature Materials, Published online: 09 January 2026; doi:10.1038/s41563-025-02460-y
Two-dimensional molybdenum disulfide arrays fabricated at wafer scale directly on a flexible substrate create large arrays of dual transistor devices for high sensitivity and multiplexed neural monitoring.
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Gate structuring on n-type bilayer MoS<sub>2</sub> field-effect transistors for ultrahigh current density
Nature Materials, Published online: 09 January 2026; doi:10.1038/s41563-025-02452-y
A dual-gate structure in bilayer MoS2 FETs is reported, allowing a high carrier density by compensating for the fringing field, which holds promise for 2D semiconductor logic applications.
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Electrically writing a magnetic heliknoton in a chiral magnet
Nature Materials, Published online: 07 January 2026; doi:10.1038/s41563-025-02450-0
Magnetic heliknotons are hopfions embedded in helical spin backgrounds. Current-induced nucleation and Hall-effect-free motion of isolated magnetic heliknotons is demonstrated in the chiral magnet FeGe.